| 摘要 |
<p>PROBLEM TO BE SOLVED: To further reduce the threshold of an electron emission element by reforming a diamond layer surface on the side, for forming an electrode by the use of ion irradiation or the like, prior to the formation of the electrode for implanting electrons to a carbonaceous low work function material such as diamond. SOLUTION: The surface of a diamond layer is subjected to ion irradiation of a dose which exceeds the critical ion dose. As a result, the resistance of the irradiated surface is significantly reduced, and the defective density is increased only in the region immediately below the surface. Therefore, the energy barrier in the interface is reduced to shorten the tunneling distance. The tunnel probability of electrons from metal electrode side to diamond side is consequently increased, and a passage extending to an electron emission element is formed even under low voltage, so that field electron emission can be performed even under low voltage. The threshold voltage of the electron emission element thus produced by use of diamond is reduced, and a highly efficient electron emission element can be provided.</p> |
