| 摘要 |
PROBLEM TO BE SOLVED: To obtain a chemical amplification type negative resist material having satisfactory etching resistance even in the case of a thinned resist film and capable of ensuring a sufficient depth of focus by incorporating a base thin film, a photo-acid generating agent, a crosslinking agent and a specified silane monomer. SOLUTION: The resist material contains a base thin film, a photo-acid generating agent, a crosslinking agent and a silane monomer of the formula Si(OR)nR'4-n, wherein R and R' may be the same or different and are each 1-8C alkyl or aryl, (n) is an integer of 1-4, in the case of n=2 to 4, all the symbols R may be the same or different, in the case of n=1 or 2, all the symbols R' may be the same or different, and R and R' may be each methyl, ethyl or phenyl. The resist material forms a negative resist material. |
