| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing apparatus, which can shorten manufacturing time for a semiconductor device and can ensure the high yield of the manufacture of the semiconductor device. SOLUTION: This manufacturing device is provided with a treating chamber 150, provided with a susceptor 140 for supporting a substrate 10 to be treated in its inside, an exhaust means 160 which is coupled with the chamber 150 and vacuum-exhausts the chamber 150, a gas feeding means 170 which is coupled with the chamber 150 and feeds gas to the chamber 150, a first power supply 210 for applying a prescribed voltage to the substrate 10, an activation means 190 which activates the gas introduced in the chamber 150 and has a second power supply 200, and a control part 220 which controls the power supplies 200 and 210 and the gas to perform ion doping treatment or etching treatment on the substrate 10. |
