| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the dispersion of width of embedded diffused layers on both sides of a floating gate caused by misalignment. SOLUTION: For a nonvolatile semiconductor storage device, an active region 2 of, for example, a p-type semiconductor substrate 1 is provided with a floating gate 4 via a gate oxide film 3, and an n-type drain region 6 and a source region 8 are made at the p-type semiconductor substrate 1 at the end of this floating gate 4, and further this device is provided with a pair of shield electrode 98 for element isolation astride adjacent memory cells, in parallel with the floating ate 4 and located outside the drain region 6 and the source region 8.
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