OPTIC SENSOR OF THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: An optic sensor of a thin film transistor and a method for fabricating the optic sensor are provided to increase the capacitance of a storage capacitor by integrally forming the transistor and the storage capacitor with a window area. CONSTITUTION: An optic sensor of a thin film transistor comprises a transparent semiconductor substrate(28). A window(34) is formed on a predetermined portion of the semiconductor substrate(28) so as to transmit the beam of a light source to an object. A storage capacitor(32a) is positioned around the window(34). A sensor portion is positioned around the storage capacitor(32a). The sensor portion generates the charge according to the beam reflected from the object.