| 摘要 |
PURPOSE: A driving substrate of thin-film micromirror array-actuated(TMA) forms a backbias line on a dielectric substrate by removing a portion of a passivation layer, thereby applying a constant backbias power to MOS transistors of the respective pixels. CONSTITUTION: An interlayer dielectric layer(570) formed on a dielectric substrate(510) exposes a portion of a source region(560b), a portion of a drain region(560c) and a portion of a conductive impurity region(610). A gate oxidation layer(550) is intervened between a gate electrode(560a), and the source and the drain regions(560b,560c). A source line(580) comes in contact with the source region(560b) exposed by the interlayer dielectric layer(570) and comes in contact with the drain region(560c) exposed by the interlayer dielectric layer(570). A passivation layer(600) to expose a portion of the conductive impurity region(610) is formed on the interlayer dielectric layer(570), a source line(580) and a drain pad(590). The portion of the conductive impurity region(610) formed on the second active region(540) is exposed by removing the interlayer dielectric layer(570) and the passivation layer(600). A backbias line(620) for applying a constant backbias power to respective MOS transistors(560) comes in contact with the conductive impurity region(610).
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