| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is constituted in such a way that the capacitor characteristic of a stack type semiconductor storage device using a ferroelectric or high dielectric film for the capacitor of its memory section is not degraded nor the micromachining of the device for a higher degree of integration is not obstructed and a method for manufacturing the device. SOLUTION: In a semiconductor device and a method for manufacturing the semiconductor device, the lead-out wiring from the upper electrode 11a of a capacitor is not formed by opening a contact hole 106' and burying metallic wiring in the hole 106' by anisotropically etching an interlayer insulating film on the electrode 112, but by forming a wiring layer in such a way that the whole surface of the electrode 112 is exposed by flattening the interlayer insulating film by chemical mechanical polishing(CMP) and a metallic wiring layer 115 is deposited on the exposed surface of the electrode 112, and then, anisotropically etching the wiring layer 115. |
