| 摘要 |
<p>PURPOSE: An epitaxial wafer which is improved in gettering ability to various kinds of contaminants in the device process of the wafer without performing any process by the EG effect after the wafer is cut and formed is provided so that a sufficient IG effect is realized even in a device manufacturing process at a low temperature of below 1,080°C in the device process. CONSTITUTION: A silicon single crystal is grown by the CZ method in an atmosphere where the oxygen concentration is relatively high and the carbon concentration is intendedly high, and the wafer exhibits an excellent gettering ability without being subjected to the EG processing. When a single crystal is pulled up, the oxygen and carbon concentrations are adequately controlled. After the crystal is cut into wafers, they are annealed for a short time at a low temperature. Thus the number of processing is decreased by not conducting various conventional complex EG processing after the wafer formation, except the processing for imparting the IG ability to the wafers, lowering the manufacturing cost.</p> |
