| 摘要 |
PURPOSE: A method for producing a capacitor is provided to equally form the thickness of a lower electrode. CONSTITUTION: A plug(4) contacted in a certain area of a semiconductor formed on a substrate(1) through a deposition structure of an oxide film(2) and a TiN layer(3) is formed, and the oxide film is deposited on an upper part of the plug and the TiN layer. Then, the upper part of the plug and the TiN layer are exposed by etching a part of the oxide film, and the oxide film is deposited. Next, a titanium electrode layer is etched by flattening the oxide film in order to expose the oxide film of a lower part, and the remaining oxide film and the oxide film remaining on the upper part of the titanium electrode layer and the TiN layer of the lower part are removed. Lastly, the titanium electrode layer is changed to a tungsten electrode layer(7) by flowing WF6 to the exposed titanium electrode layer.
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