| 摘要 |
PROBLEM TO BE SOLVED: To provide the method of reducing the difference of planar temperature of the wafer to enhance the temperature rising speed or temperature falling speed when a large diameter wafer is heat-treated. SOLUTION: The circumference of a wafer is heated up to a high temperature when the wafer is heat-treated and the center part of the wafer is heated up to a high temperature when the wafer is cooled down in the heat treatment such as CVD and annealing, etc. When the rising speed and the falling speed of temperature are increased, the temperature difference between the high temperature part and the low temperature part becomes large, and a slipping phenomenon is generated when the difference becomes 5 to 7 deg.C or higher on a 12-inch wafer. Temperature rising speed and temperature falling speed can be increased without slipping in this semiconductor device. In this manufacturing method, the wafer 7 is rotated in the process when the temperature of the wafer 7 is heated up and cooled down at the temperature lower than 800 deg.C, and heating or cooling gas having the temperature higher or lower than the wafer 7 and non-reactive to the wafer 7 is jetted to the wafer 7 from the position 16a in the neighborhood of the edge of the wafer 7.
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