| 摘要 |
PROBLEM TO BE SOLVED: To obtain a chemical amplification type positive photoresist composition excellent in transparency to excimer laser light, dry etching resistance, sensitivity, resolution and developability and capable of forming a superior resist pattern by using a specified polymer, a specified low molecular compound, an acid generating agent and a solvent. SOLUTION: The positive photoresist composition consists of a polymer having repeating units of formula I, an average molecular weight (expressed in terms of polystyrene) of 3,000-50,000 and a molecular weight distribution of 1.0-2.0, a low molecular compound of formula II, an acid generating agent and a solvent. In the formula I, R1 and R2 are each methyl, ethyl, t-butyl or the like, (l), (m), (n) and (o) show the ratio among the repeating units in the principal chain, l+m+n+o=1 and (o) is 0.4-0.6. In the formula II, R3 and R4 are each H or hydroxyl and R5 is lower alkyl or alkyl containing bicyclo[2,2,1]heptane or the like. |
