| 摘要 |
PROBLEM TO BE SOLVED: To align a source/drain extension part to a gate by injecting dopant just at the same time or after a silicon plug is formed. SOLUTION: Oxide such as silicon dioxide is used as a dopant source for a source and drain extension part through solid phase diffusion which can drive away the dopant into a single crystalline silicon plug 130 by using layers 110, 120. Then, dopant is driven away from doped oxide to an adjacent undoped crystalline semiconductor material (or a crystalline semiconductor material which is doped with dopant of relative type at a low concentration). Since a doped region is defined by a silicon plug 130 and an interface between layers 110 and 120 of a material which is used as dopant source, a self-aligned source/ drain extension part can be formed.
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