发明名称 ELECTRIC FIELD EMISSION TYPE ELECTRON SOURCE, AND ITS MANUFACTURE
摘要 <p>PROBLEM TO BE SOLVED: To provide a cold cathode structure for uniformizing an emitter structure, and also provide a focusing electrode structure that can be simply manufactured at low cost, and reduce device area. SOLUTION: Gate insulating films 8 and gate electrodes 10 are sequentially laminated on a substrate 1, and emitters 14 are formed in the central part of the gate electrode 10. A focusing electrode 11 is formed so as to non-contactly surround the gate electrodes 10 together with overlapping regions 16 on the gate electrodes 10. Many emitters 14 are electrically connected with the substrate 1, and an electron emission region is formed from these and the gate electrode 10 insulated by the gate insulating film 8.</p>
申请公布号 JP2000090810(A) 申请公布日期 2000.03.31
申请号 JP19980255738 申请日期 1998.09.09
申请人 SHARP CORP 发明人 OKI HIROSHI;IDE TETSUYA
分类号 H01J3/18;H01J1/304;H01J9/02;(IPC1-7):H01J1/304 主分类号 H01J3/18
代理机构 代理人
主权项
地址