Antireflective coating and wiring line stack

摘要

Titanium aluminum nitrogen ("Ti-Al-N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti-Al-N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti-Al-N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti-Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.