| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided, which can sufficiently secure a wire contact margin when forming the contact of a semiconductor device. CONSTITUTION: The method comprises the steps of: providing a silicon substrate (1) which an active region is defined; successively forming a first oxidation film (2) and a first nitration film (3) on the silicon substrate (1); forming a first photosensitive film pattern ton the first nitration film (3); patterning the first nitration film (3) and the first oxidation film (2); removing the photosensitive pattern; forming oxidation film spacers (4, 4a) at a side surface of the first nitration film (3) and the first oxidation film (2) and forming an oxygen injection region on the silicon substrate (1); selectively removing the silicon substrate (1) to forming a trench (6); oxidizing a portion of the silicon substrate (1) located in an inner side of a side wall of the trench (6) to forming an oxidation region; forming second oxidation films (7, 7a, 7b); etching second oxidation films (7, 7a, 7b); wet-etching second oxidation films (7, 7a, 7b) and the first nitration film (3); forming an ion injection region; forming a second photosensitive film pattern and forming a wire contact; and forming a plug ion injection region. Thereby, it is possible to prevent a shot of a well and a wire.
|
