| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent a semiconductor chip from being affected byα-rays by providing a protective film on the chip and, at the same time, connecting the electrodes of the chip to the connection electrodes of a wiring board through bonding wires and sealing the chip and bonding wires with a transfer mold. SOLUTION: After a die bonding process in which a semiconductor chip 1 is die-bonded to a wiring board 18 by applying a die-bonding agent to the central part of the upper surface of the board 18 and placing the chip 8 on the agent 7, and then, curing the agent 7 by drying, the electrodes of the chip 1 are electrically connected to connection electrodes 3 on the board 18 through bonding wires 8. Thereafter, the chip 1 and bonding wires 8 are sealed with a transfer mold 9. Before the chip 1 is sealed, a protective film 12 is formed on the chip 1 for protecting a circuit element, and the thickness of the film 12 is made equal to or thicker than the range ofα-rays generated from a radioactive material contained in the filler of the transfer mold 9 in the material.</p> |
