| 摘要 |
PROBLEM TO BE SOLVED: To prevent Si-H bonding from converting into Si-OH bonding by oxygen and water, while applying and calcining HSQ (hydrogen silses quinoxane) and to similarly prevent the Si-H bonding from being converted into Si-OH bonding in a photoresist peeling process or the like, after forming a pattern on an HSQ film. SOLUTION: In this semiconductor device manufacturing method for applying a solution on a semiconductor substrate 1 and forming an insulation film provided with the Si-H bonding on the semiconductor substrate by calcination, the application and calcination process of the solution is performed under the atmosphere of a gas containing fluorine or steam containing fluorine. Thus, water present inside the substrate and the insulation film formed on the substrate, etc. is removed, the Si-H bonding in the HSQ film 6 is prevented from being converted into the Si-OH bonding and the interlayer insulation film 5 of a low dielectric constant is provided.
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