| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a fine through-hole in a thick tungsten (W) film. SOLUTION: A W film 2 is formed on an Si substrate 1. Then, an SiO2 film 3 is formed on the W film 2, it is patterned, and a fine through-hole pattern which is composed of the SiO2 film 3 is formed. Then a W film 6 which covers the through-hole pattern (the SiO2 film 3) is formed on the W film 2. Then, the Si substrate 1, the W film 2, the through-hole pattern and the W film 6 are cut so as to cross the through-hole pattern. Then, a face which is exposed by their cutting operation is polished to as to be a required thickness. Lastly, the through-hole pattern is removed by a wet etching operation. Thereby, a fine through-hole can be formed in the W films 2, 6.</p> |
