| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist removing method, which can perform high throughput only through ashing without using the process, wherein ashing residual is removed by chemicals. SOLUTION: This resist removing method is performed with oxygen plasma being generated by introducing oxygen gas into a vacuum chamber 1 and applying high-frequency voltage on a stage 2 for mounting a substrate 3. The ashing of the resist of the substrate having the resist is performed in the plasma. Then, the mixed gas, wherein a minute amount of fluorine gas is added into the oxygen gas in the same chamber, is introduced. The plasma of the mixed gas is formed by microwaves or high-frequency electromagnetic field. The resist and residual remained by down flowing are removed through selective ashing. |
