METHOD FOR FORMING A POLYCIDE GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to improve a distance margin between a gate electrode and a junction layer using a self-aligned silicide film. CONSTITUTION: The method comprises the steps of: patterning and forming a polysilicon gate electrode on a silicon substrate(20), forming an insulating film spacer into the polysilicon gate electrode, etching the patterned polysilicon gate electrode and the silicon substrate, and forming a self-aligned silicide on the polysilicon gate electrode and an exposed portion of the silicon substrate. Thereby, it is possible to improve a stability of the gate electrode of the semiconductor device and then to improve a distance margin between a gate electrode and a junction layer using a self-aligned silicide film.