METHOD FOR FORMING A METAL GATE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal gate electrode formation method is provided to minimize a reaction between tungsten(W) and periphery materials, thereby using the tungsten layer having low resistivity as the gate electrode. CONSTITUTION: The method comprises the steps of: forming a gate oxide layer(22) on a semiconductor substrate(20); forming a polysilicon layer(23) on the gate oxide layer; depositing a Ti film(24) on the polysilicon layer(23); performing the Ti film(24) by oxygen plasma; depositing a TiN film(25) on the Ti film and performing the TiN film(25) by oxygen plasma during the deposition; forming a tungsten layer(26) on the TiN film; and patterning the tungsten layer(26) to form a gate electrode.