METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of semiconductor devices having a shallow junction is provided to improve an yield of devices by uniformly forming a screen oxide used for preventing defects of wafer. CONSTITUTION: In an etching process of a spacer oxide layer(22) of a gate electrode, the emission rate of thermal transmission gas applied to a wafer(21) is higher at edge portions(D) of the wafer(21) than that of center portions(C) of the wafer. Thereby, the etching rate of the edge portions(D) of the wafer(21) is higher than that of the center portion(C) of the wafer(21). The thermal transmission gas is a helium(He) gas.