发明名称 |
Method of manufacturing semiconductor bonded substrate |
摘要 |
The most distinctive feature of the present invention lies in that a warp and crystal defects can be prevented from occurring and a processing margin for forming an isolation groove can be improved in an intelligent power device including a power element section and an IC control section within one chip. A bonded wafer is obtained by bonding an active-layer substrate and a supporting substrate with an epitaxially grown silicon layer interposed therebetween so as to cover an oxide film selectively formed at the interface of the active-layer substrate. Isolation trenches are then formed in the bonded wafer to such a depth as to reach the oxide film from the element forming surface of the active-layer substrate. Thus, an IC controller is formed within a dielectric isolation region surrounded with the isolation trenches and the oxide film and accordingly the IC controller can effectively be isolated by a dielectric.
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申请公布号 |
US6010950(A) |
申请公布日期 |
2000.01.04 |
申请号 |
US19980026508 |
申请日期 |
1998.02.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUMURA, HIDEKI;OSAWA, AKIHIKO;BABA, YOSHIRO |
分类号 |
H01L21/02;H01L21/18;H01L21/76;H01L21/762;H01L27/12;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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