发明名称 PLASMA CHEMICAL EVAPORATION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a plasma chemical evaporation system capable of producing an extremely better film thickness distribution than a prior system, with the use of a power distributor for distributing feed power through a plurality of coaxial cable feeding high frequency power to a parallel flat-plate electrode. SOLUTION: A plasma chemical evaporating system comprising a reactor chamber 21, a means for feeding reactive gas to the reactor chamber 21, a means for discharging reactive gas from the reactor chamber, an anode electrode 23 with a built-in heater provided in the reactor chamber 21 and supporting a wafer 29, a cathode electrode 22 provided opposing to the anode electrode 23, and a power supply 24 feeding power for glow discharge of 30 MHz to 200 MHz frequency to the cathode electrode 22, generates glow discharge with the use of the power applied from the power supply 24, and forms amorphous thin film, micro crystal thin film, or polycrystalline thin film on a surface of the prescribed wafer. The number of feeding points connecting the cathode electrode 22 and the power supply 24 is determined to 4 or more and a power distributor 60 equally distributing feed power is used in the plasma chemical evaporation system.
申请公布号 JPH11340150(A) 申请公布日期 1999.12.10
申请号 JP19980149230 申请日期 1998.05.29
申请人 MITSUBISHI HEAVY IND LTD 发明人 MURATA MASAYOSHI;TAKEUCHI YOSHIAKI
分类号 H01L21/205;C23C16/50;H01L31/04 主分类号 H01L21/205
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