发明名称 |
BUBBLE DEVICE FABRICATION |
摘要 |
<p>BUBBLE DEVICE FABRICATION A single level masking process for producing microelectronic structures, such as magnetic bubble domain devices, which require very fine line widths. This is a subtractive dry process using a very thin, additively plated mask in order to obtain optimum lithographic resolution. Use of the very thin plated mask eliminates the need for a thick resist layer which would adversely affect resolution. In one example, a double layer metallurgy comprising a conductor layer (such as Au) and an overlying magnetically soft layer (such as NiFe) is patterned using a thin Ti (or Cr) mask. The Ti mask is subtractively patterned using a NiFe mask which is itself patterned by electroplating through a thin resist layer. The double layer NiFe/Au structure is patterned to provide devices having high aspect ratio, good pattern acuity, and uniform thicknesses, where the minimum feature is 1 micron or less. Y0978-043</p> |
申请公布号 |
CA1128206(A) |
申请公布日期 |
1982.07.20 |
申请号 |
CA19790338282 |
申请日期 |
1979.10.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COX, DANIEL E.;KANE, SUSAN M.;POWERS, JOHN V. |
分类号 |
G11C11/14;G11C19/08;H01F10/06;H01F10/12;H01F10/13;H01F41/14;H01F41/34;(IPC1-7):11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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