| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device with improved high pressure- proof characteristic and productivity, and its manufacture. SOLUTION: An insulating film 36d, a semi-insulating polysilicon film 42 are laminated on a semiconductor substrate whereon a collector region 32, a base region 34, an emitter region 38 and a channel stop region 40 are formed and then a thin nitride film 44 about 5100Å-5,000Åthickness as a protective film is formed using LP-CVD process on the semi-insulating polysilicon film 42. Furthermore, the insulating film 36d is etched away over the entire surface to a specified thickness before evaporating the semi-insulating polysilicon film 42. |
