发明名称 |
GATE CONTROL CIRCUIT FOR VOLTAGE DRIVE SWITCHING ELEMENT |
摘要 |
A gate control circuit for turning on and off an insulated gate semiconductor device having gate, emitter and collector terminals, including a first DC power source coupled to the gate terminal via a first switch and configured to apply a positive voltage to the gate terminal in order to turn on the insulated gate semiconductor device when the first switch is turned on and the second switch is turned off; a second DC power source coupled to the gate terminal via a second switch and configured to apply a negative voltage to the gate terminal in order to turn off the insulated gate semiconductor device when the second switch is turned on and the first switch is turned off; a parallel circuit of a diode and a capacitor coupled in series to the second switch; and a turn off assist circuit configured to produce a negative charge on the capacitor to assist in turning off the insulated gate semiconductor device. In a power converter circuit having a plurality of insulated gate semiconductor devices, equalization of delay times for turning off the insulated gate semiconductor devices is achieved by controlling a charged stored in the capacitor of each gate control circuit based on detected collector-emitter voltages or detected emitter currents.
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申请公布号 |
CA2267544(A1) |
申请公布日期 |
1999.09.30 |
申请号 |
CA19992267544 |
申请日期 |
1999.03.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO, SHINJI;KOYAMA, TATEO;MATSUMURA, HITOSHI;ICHIKAWA, KOSAKU |
分类号 |
H02M3/00;H02M1/06;H03K17/04;H03K17/0412;(IPC1-7):H02M7/217 |
主分类号 |
H02M3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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