<p>A process for creating and an apparatus employing shaped orifices in a semiconductor substrate (20). A layer of slow cross-linking material (34) is applied on the semiconductor substrate (20). An orifice image (42) and a fluid-well image (43) is transferred to the layer of slow cross-linking material (34). That portion of the layer of slow cross-linking material (34) where the orifice image (42) is located is then developed along with that portion of the layer of slow cross-linking material (34) where the fluid well image (43) is located to define an orifice opening in the semiconductor substrate (20). <IMAGE></p>
申请公布号
EP0940257(A2)
申请公布日期
1999.09.08
申请号
EP19990301512
申请日期
1999.03.01
申请人
HEWLETT-PACKARD COMPANY
发明人
CHEN, CHIEN-HAU;WENZEL, DONALD E.;LIU, QIN;KAWAMURA, NAOTO;SEAVER, RICHARD W.;WU, CARL;VAN VOOREN, COLBY;HESS, JEFFERY S.;DAVIS, COLIN C.