发明名称 |
Source connection structure for lateral RF MOS devices |
摘要 |
A source connection structure for a lateral RF MOS device is disclosed. The connection structure utilizes a conductive plug to connect a source area and a body area of the device with a backside. The usage of a conductive plug eliminates at least one doping area used for connectivity purposes. Therefore, the density of RF MOS devices per unit area of the chip is increased. |
申请公布号 |
US5949104(A) |
申请公布日期 |
1999.09.07 |
申请号 |
US19980020257 |
申请日期 |
1998.02.07 |
申请人 |
XEMOD, INC. |
发明人 |
D'ANNA, PABLO EUGENIO;JOHNSON, JOSEPH HERBERT |
分类号 |
H01L21/768;H01L23/482;H01L29/10;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/423;H01L29/739;H01L29/43 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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