| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the transfer characteristic of a thin film transistor. SOLUTION: The thin film transistor is formed on an insulating substrate, and comprises a semiconductor layer 16 which contains a major surface 16A and inclined side faces 16B placed around the major surface 16A, a gate insulating film which is formed on the insulating substrate to cover the conductor layer 16 and the thickness of which is larger on the inclined side faces 16B than on the major surface 16A, a gate electrode 15 which is formed on the gate insulating film and crosses the semiconductor layer 16, and source and drain regions 13, 11 which are formed in the semiconductor layer 16 and sandwich a region of the semiconductor layer 16 covered with the gate electrode 15 as a channel region CH. The channel region CH is so set that its channel length is partly large at least at the inclined side faced 16B.</p> |
