发明名称 |
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface |
摘要 |
A multi-layer structure inserted onto an interface between a compound semiconductor region and a highly resistive material region includes an epitaxial silicon layer up to 1.5 nm thick in contact with the compound semiconductor region and an amorphous silicon layer from 1 to 10 nm thick in contact with the highly resistive material region and laminated on the epitaxial silicon layer.
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申请公布号 |
US5942792(A) |
申请公布日期 |
1999.08.24 |
申请号 |
US19980071492 |
申请日期 |
1998.05.04 |
申请人 |
NEC CORPORATION |
发明人 |
MIYOSHI, YOSUKE |
分类号 |
H01L21/20;H01L21/331;H01L21/336;H01L21/338;H01L29/205;H01L29/267;H01L29/73;H01L29/737;H01L29/786;H01L29/812;(IPC1-7):H01L31/032 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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