| 摘要 |
PROBLEM TO BE SOLVED: To avoid oxidation of a barrier during high-temperature treatment and to obtain a high capacity with a small required area by using mainly transition elements on the one hand and using a compound comprised of phosphorus, sulfur or arsenic, namely a phosphide of transition metal as barrier layer on the other hand. SOLUTION: A MOS insulating layer 6 covers a transistor. In this case, a doped area 3 is provided with a connection structure 7 comprised of tungsten. Such a structure is subjected to heat treatment in an atmosphere of PH3* for forming a barrier layer. During treatment, a barrier layer 10 is formed with self matching on the connection structure 7 by reaction of tungsten with PH3*. A first lower electrode 11 of a capacitor is formed by sputtering of a platinum layer and by adequate structuring. Consecutively, a high εdielectric material 12 is deposited. In deposition, tungsten phosphide acts as barrier against oxygen diffusing during deposition and inhibits oxidation of the connection structure 7. Finally, a second electrode of the capacitor is formed of platinum. |
