| 摘要 |
PROBLEM TO BE SOLVED: To obtain an industrially useful high-density ITO sintered compact excellent in the characteristics as a sputter target by molding and sintering a powder composed of indium, tin and oxygen, and to obtain an ITO sputter target from the above sintered compact. SOLUTION: This ITO sintered compact is obtained by holding a molded form of ITO powder or indium oxide-tin oxide mixed powder at 1,000-1,300 deg.C for 2 h or longer followed by temperature raising to keep the powder at 1,500-1,650 deg.C for one hour or longer and then sintering the powder. |
