发明名称 IMPROVED GAPFILL OF SEMICONDUCTOR STRUCTURE USING DOPED SILICATE GLASSES WITH MULTI-STEP DEPOSITION/ANNEAL PROCESS
摘要 <p>Improved gap fill of narrow spaces is achieved by forming a doped silicate glass (231-235) with a multi-step deposition/anneal process. The doped silicate glass (231-235) is partially deposited at a sufficiently high temperature to cause reflow. The partially deposited doped silicate glass is then annealed to cause further reflow and filling of the narrow spaces to reduce the aspect ratio of the spaces. The partial deposition and annealing are repeated a plurality of times until the doped silicate glass reaches a desired thickness.</p>
申请公布号 WO1999017358(A1) 申请公布日期 1999.04.08
申请号 EP1998006279 申请日期 1998.09.30
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