发明名称 Halbleitervorrichtung
摘要 A semiconductor comprises an LOC structure. A bonding pad (24) solely for receiving a signal is formed parallel to a perimeter on top in the middle of the said element-formation surface, a bonding pad (25) solely for transmitting a signal is formed around the periphery of the said element-formation surface, an inner lead (26) solely for receiving a signal has its tip positioned parallel to the perimeter on top in the middle of the said element-formation surface, an inner lead (27) solely for transmitting a signal has its tip positioned on top of the periphery of the said element-formation surface. <IMAGE>
申请公布号 DE69226742(T2) 申请公布日期 1999.01.14
申请号 DE1992626742T 申请日期 1992.09.21
申请人 FUJITSU LTD., KAWASAKI, KANAGAWA, JP 发明人 OGAWA, JUNJI, C/O FUJITSU LIMITED, KAWASAKI-SHI, KANAGAWA, 211, JP;TAKITA, MASATO, C/O FUJITSU LIMITED, KAWASAKI-SHI, KANAGAWA, 211, JP
分类号 H01L21/82;H01L21/822;H01L23/495;H01L23/50;H01L27/04 主分类号 H01L21/82
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