发明名称 |
PHOTOSENSITIVE ORGANOSILICON FILMS |
摘要 |
A process for making a two-component plasma-deposited photo-oxidizable organosilicon film on a substrate from a silicon donor and an organic precursor. Subjecting selected areas of the film to photo-oxidation allows selective etching of the non-photo-oxidized or photo-oxidized areas of the film. The process is used as a resist for patterning substrates in the fabrication of solid-state devices. It is of particular use in patterning heat sensitive substrates and accomplishing microlithography in a completely sealed vacuum process. The process allows photo-oxidation with ultraviolet light at wavelengths closer to visible light than that for conventional photoresists. The processed film exhibits selective wetting properties between the non-photo-oxidized and photo-oxidized areas of the film.
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申请公布号 |
WO9856513(A1) |
申请公布日期 |
1998.12.17 |
申请号 |
WO1998US11998 |
申请日期 |
1998.06.10 |
申请人 |
KUBACKI, RONALD, M. |
发明人 |
KUBACKI, RONALD, M. |
分类号 |
C08G77/38;C09D4/00;G03F7/075;G03F7/16;G03G5/05;H05K3/18;(IPC1-7):B05D3/00;C08J7/18;H05H1/24;C08G77/12;G03G5/00;G03G1/492 |
主分类号 |
C08G77/38 |
代理机构 |
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代理人 |
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地址 |
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