Transistor switches

摘要

An electronic switch (80) having a transistor (T) and a diode (D) formed on a substrate (82) is provided. The electronic switch (80) includes a common transistor collector and diode cathode region (81) of a first conductivity type formed in the substrate (82). The switch (80) also includes a transistor base region (83) of a second conductivity type formed in a first section of the collector region (81) and a transistor emitter region (84) of the first conductivity type formed in a section of the base region (83). Additionally, the electronic switch (80) includes a diode anode region (85) formed of the second conductivity type and in a second section of the collector region (81). At least a portion of the anode region (85) is selectively doped with a metallic dopant to provide centers for charge carrier recombination so as to decrease the recovery time of the diode (D).