| 摘要 |
A semiconductor memory device with a contactless array structure has bit-lines formed in a semiconductor substrate by diffusion of an impurity. Word-lines (control gates) are formed on the substrate so as to intersect the bit-lines. Floating gates are disposed in intersecting regions between the bit- and word-lines. Regions of higher resistance extend in parallel to the bit-lines located on both sides of a floating gates and located in an offset manner relative to the floating gate. A thick dielectric film is formed between the regions of higher resistance and word-lines. In this semiconductor memory device, a source side injection method with higher efficiency can be utilized for electron injection to a floating gate (programming) and thereby a lower programming voltage, less power consumption, and higher degree of integration are achieved.
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