发明名称 SURFACE ACOUSTIC WAVE DEVICE
摘要 <p>In a surface acoustic wave device comprising an interdigital electrode on a surface of a substrate wherein said substrate is a langasite single crystal belonging to a point group 32, a combination of a cut angle of the substrate out of the single crystal and a propagation direction of surface acoustic waves is optimized. This makes it possible to achieve a surface acoustic wave device comprising a substrate having a temperature coefficient of SAW velocity, TCV, the absolute value of which is small, a large electromechanical coupling factor k&lt;2&gt;, and low SAW velocity. It is thus possible to achieve a filter device which is improved in terms of temperature stability, has a wide passband, and is reduced in size, especially an intermediate-frequency surface acoustic wave filter having improved characteristics best-fitted for mobile communication terminal equipment. &lt;IMAGE&gt;</p>
申请公布号 EP0874455(A1) 申请公布日期 1998.10.28
申请号 EP19970907362 申请日期 1997.03.18
申请人 TDK CORPORATION 发明人 INOUE, KENJI;SATO, KATSUO
分类号 H03H9/02;(IPC1-7):H03H9/145;H03H9/25 主分类号 H03H9/02
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