发明名称 |
Body contacted SOI MOSFET |
摘要 |
A new method of forming a silicon-on-insulator device having a body node contact is described. Active areas are isolated from one another within a silicon-on-insulator layer. Adjacent active areas are doped with dopants of opposite polarities to form at least one n-channel active area and at least one p-channel active area. Gate electrodes are formed over each active area. The area directly underlying the gate electrode and extending downward to the insulator layer comprises the body node. Lightly doped areas are formed beneath the spacers on the sidewalls of the gate electrodes. First ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one n-channel active area and whereby a p-channel body contact region is formed within the at least one p-channel active area wherein the p-channel body contact region contacts the p-channel body node. Second ions are implanted into the active areas not covered by a mask whereby source and drain regions are formed in the at least one p-channel active area and whereby an n-channel body contact region is formed within the at least one n-channel active area wherein the n-channel body contact region contacts the n-channel body node. The semiconductor substrate is annealed to complete formation of the silicon-on-insulator device having a body node contact in the manufacture of an integrated circuit.
|
申请公布号 |
US5804858(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19960721667 |
申请日期 |
1996.09.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
HSU, CHING-HSIANG;LIANG, MONG-SONG |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01;H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|