| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device with high throughput, by which a photo resist film can be made thinner than heretofore. SOLUTION: A photo resist film 2 is formed on an insulation film 1 formed on the surface of a semiconductor substrate W, and after exposing and developing the film 2, the film 1 is etched selectively to form a wiring layer 4 on the surface of the substrate W and the surface thereof is ground. In such a production method, a dopant 5 is injected to the film 2 in advance before etching so as to improve the etching resistance. In this method, the film 2 is not removed before forming the wiring layer 4 on the surface of the substrate W. In addition, when the surface thereof is subject to grinding, the film 2 may be removed by grinding together with it. |
