发明名称 |
Optical semiconductor device for changing a beam diameter |
摘要 |
An optical semiconductor device has a greatly reduced transmission constant even when a reduction rate in the thickness of a core layer is small so that a relatively high beam-diameter increasing efficiency is obtained. The optical semiconductor device has a multilayered structure with a first end surface perpendicular to an optical axis of the optical semiconductor device and a second end surface opposite to the first end surface. A core layer has a first refractive index. A lower cladding layer is provided on a lower side of the core layer, the lower cladding layer having a second refractive index. An upper cladding layer is provided on an upper side of the core layer, the upper cladding layer having the second refractive index. A transmission constant reduction enhancing layer is provided between the lower cladding layer and the upper cladding layer, the transmission constant reduction enhancing layer having a third refractive index less than the first refractive index and the second refractive index. The optical semiconductor device includes a first area and a second area, a portion of the core layer in the first area having a uniform thickness, a portion of the core layer in the second area having a thickness gradually decreasing toward the first end surface of the optical semiconductor device.
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申请公布号 |
US5787106(A) |
申请公布日期 |
1998.07.28 |
申请号 |
US19960613208 |
申请日期 |
1996.03.08 |
申请人 |
FUJITSU LIMITED |
发明人 |
TABUCHI, HARUHIKO;NORIZUKI, MASUMI;GOTO, MASAMI |
分类号 |
G02B6/12;G02B6/122;H01S3/10;H01S5/00;H01S5/026;H01S5/10;H01S5/12;H01S5/20;(IPC1-7):H01S3/19;G02B6/10;H01S3/08 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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