Method for erasing an electrically programmable and erasable non-volatile memory cell

摘要

A method for erasing an electrically programmable and erasable non-volatile memory cell having a control electrode, an electrically-insulated electrode and a first electrode. The method provides for coupling the control electrode to a first voltage supply and coupling the first electrode to a second voltage supply. The first voltage supply and the second voltage supply are suitable to cause tunneling of electric charges between the electrically-insulated electrode and the first electrode. The method also provides for a constant current to flow between the second voltage supply and the first electrode of the memory cell for at least part of an erasing time of the memory cell, the constant current having a prescribed value.