Process for producing semiconductor integrated circuit

摘要

When the source and drain regions (an n- type semiconductor region and an n+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impurities for the punch-through stopper are suppressed from being supplied to the feeding portion (an n+ type semiconductor region) of the n-type well.