发明名称 INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To reduce required drive current and power consumption for the device, by laying interconnecting metal circuit lines on a substrate and disposing a specified dielectric material adjacent to the circuit lines. SOLUTION: The device comprises a substrate 2, meal circuit lines 4' and a dielectric material 6. The substrate 2 has vertical studs 8 formed therein. The dielectric material 6 in an org. polysilica, pref. a reaction product with polyaminate, having a terminal group (RO)m (R'')n SiR'-; m=1, 2 or 3, m+n=3, R and R' are hydrocarbyl group, R'' is hydride or hydrocarbyl group. The terminal group is a mono-, di- or tri-C1-C10 alkoxysilyl C1-10 alkyl or aryl group. This lowers the dielectric const. of the inserted dielectric material to allow the circuit line spacing to be reduced, without increasing the crosstalk or capacitive coupling, and also reduces the drive current and power consumption.</p>
申请公布号 JPH10135202(A) 申请公布日期 1998.05.22
申请号 JP19970281641 申请日期 1997.10.15
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 BROWN HUGH RALPH;KENETH RAYMOND CARTER;CHA HYUK-JIN;DIPIETRO RICHARD ANTHONY;JAMES LUPTON HEDRICK;HUMMEL JOHN PATRICK;ROBERT DENNIS MILLER;YOON DO YEUNG
分类号 C08G77/455;C08G73/10;C09D183/10;H01L21/316;H01L21/768;H01L23/498;H01L23/522;(IPC1-7):H01L21/316 主分类号 C08G77/455
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