发明名称 PHASE INVERSION MASK AND ITS PRODUCTION
摘要 <p>PROBLEM TO BE SOLVED: To provide a phase inversion mask having a halftone region and its production method. SOLUTION: The phase inversion mask containing a phase inversion region and a phase non-inversion region has a halftone region adjacent to the phase non-inversion region. In the halftone region, the phase of incident light is changed in a specified range. Thereby, part of the light which transmits through the phase non-inversion region of the PSM (phase inversion mask) substrate 40 is made to interfere so that the difference in CD(critical dimension) between patterns produced by the light which transmits through the phase inversion region and through the phase non-inversion region can be decreased.</p>
申请公布号 JPH1069061(A) 申请公布日期 1998.03.10
申请号 JP19970162512 申请日期 1997.06.19
申请人 SAMSUNG ELECTRON CO LTD 发明人 SHIN JINKIN
分类号 G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
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