Gerät zur Darstellung von Mustern zum Einsatz im extremen UV-Bereich
摘要
<p>The operating principle of the attenuated phase mask is incorporated in a reflecting structure for use with extreme ultraviolet radiation. A working projection-reduction system for use with 0.18 mu m and smaller features combines the mask with all-reflecting optics.</p>
申请公布号
DE69501452(D1)
申请公布日期
1998.02.19
申请号
DE1995601452
申请日期
1995.10.11
申请人
AT & T CORP., NEW YORK, N.Y., US
发明人
TENNANT, DONALD MILAN, FREEHOLD, NEW JERSEY 07728, US;WOOD II, OBERT REEVES, LITTLE SILVER, NEW JERSEY 07739, US;WHITE, DONALD LAWRENCE, MORRIS PLAINS, NEW JERSEY 07950, US
