METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing semiconductor device includes a process in which an impurity diffusion layer is formed for controlling threshold voltage by ion implantation and another process in which high-temperate heat treatment is performed for a short time for remedying a crystal defect caused by the ion implantation. To be concrete, the condition of the heat treatment is decided so that the impurities in the impurity diffusion layer cannot be diffused, whereas the inter-lattice atom which causes the crystal defect can be diffused. The heat treatment is performed within a temperature range of, for example, about 900 DEG C to about 1,100 DEG C.