发明名称 PEELING LIQUID FOR RESIST FILM
摘要 PROBLEM TO BE SOLVED: To obtain excellent peeling property and corrosion resistance by preparing a peeling liquid from water and at least one kind selected from among ammonium hydroxide, a quaternary ammonium hydroxide and an alkanolamine. SOLUTION: This peeling liquid for a resist film consists of an aq. soln. containing at least one kind selected from among ammonium hydroxide, a quaternary ammonium hydroxide and/or an alkanolamine. Thereby, the obtd. liquid has a function to peel a deposited film for protection of sidewalls of an etching pattern after a thin film of a ferroelectric material such as PZT is etched by using iridium or an iridium compd. as an electrode material. Further, if necessary, a sugar alcohol, a chelating agent and/or an org. solvent may be added to the soln. Thereby, noncorroding property for a wiring material is harmonized and the ability as a peeling liquid can be improved to peel a deposited film for protection of sidewalls of a resist pattern after a thin film made of a ferroelectric material containing a wiring material is etched.
申请公布号 JPH09319098(A) 申请公布日期 1997.12.12
申请号 JP19960131744 申请日期 1996.05.27
申请人 ROHM CO LTD;KANTO CHEM CO INC 发明人 KANZAWA AKIRA;NAKAMURA TOMOHITO;MIYAZAKI MASAO;MORI KIYOTO
分类号 G03F7/42;C11D7/06;C11D7/26;C11D7/32;C11D7/50;H01L21/027;H01L21/308;(IPC1-7):G03F7/42 主分类号 G03F7/42
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