<p>Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl2 at a volumetric flowrate ratio of HCl:Cl2 within the range of 3:1 to 5:1.</p>
申请公布号
EP0807968(A2)
申请公布日期
1997.11.19
申请号
EP19970107458
申请日期
1997.05.06
申请人
KABUSHIKI KAISHA TOSHIBA;INTERNATIONAL BUSINESS MACHINES CORPORATION;SIEMENS AKTIENGESELLSCHAFT
发明人
HOH, PETER D.;OHIWA, TOKUHISA;GREWAL, VIRINDER;SPULER, BRUNO;KOCON, WALDEMAR;WILTSHIRE, GUADALUPE